Theory, fabrication, and characterization of solid state devices including P-N junctions, capacitors, bipolar and MOS devices. Devices are fabricated using modern VLSI processing techniques including lithography, oxidation, diffusion, and evaporation. Physics and performance of processing steps are discussed and analyzed.

Prerequisites: ECE 132 with a minimum grade of C-.

4

Units

Letter

Grading

1, 2, 3

Passtime

Undergraduate students only

Level Limit

Engineering

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