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  • ECE 217

    • Molecular Beam Epitaxy and Band Gap Engineering . ECE 217

    Fundamentals and recent research developmnets in the growth and properties of thin crystalline films of electronic and optical materials bythe process of molecular beam epitaxy. Artificially structured materials with quantized electron confinement and artificially engineered electronic band structure properties.

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    Prerequisites: MATRL 162A-B or ECE 162A-B.

    3

    Units

    Letter

    Grading

    1, 2, 3

    Passtime

    None

    Level Limit

    Engineering

    College
    Instructors
    T B A
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    Lecture
    PHELP1417
    M W
    15:30 PM - 16:45 PM
    8 / 15
    Sections
    HFH 5162D
    R
    19:00 PM - 21:50 PM
    8 / 8 Full
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    Spring 2024 . Palmstrom C J
    PHELP1417
    M W
    15:30 PM - 16:45 PM
    Spring 2025 . Palmstrom C J
    PHELP1417
    M W
    15:30 PM - 16:45 PM
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    ECE 217 Palmstrom C J Spring 2025 Total: 5
    ECE 217 Palmstrom C J Spring 2024 Total: 5
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