Theory, fabrication, and characterization of solid state devices including P-N junctions, capacitors, bipolar and MOS devices. Devices are fabricated using modern VLSI processing techniques including lithography, oxidation, diffusion, and evaporation. Physics and performance of processing steps are discussed and analyzed.

Prerequisites: ECE 132 with a minimum grade of C-.

4

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1, 2, 3

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Undergraduate students only

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Engineering

College
Unlocks ECE 120B
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NH 1109
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09:30 AM - 10:45 AM
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Winter 2024 . Ben-Yaacov I
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