Theory, fabrication, and characterization of solid state devices including P-N junctions, capacitors, bipolar and MOS devices. Devices are fabricated using modern VLSI processing techniques including lithography, oxidation, diffusion, and evaporation. Physics and performance of processing steps are discussed and analyzed.
4
UnitsLetter
Grading1, 2, 3
PasstimeUndergraduate students only
Level LimitEngineering
College